磁控溅射与电子束蒸发制备Ti薄膜性能的研究

李兆营

doi:10.7513/j.issn.1004-7638.2023.02.014

磁控溅射与电子束蒸发制备Ti薄膜性能的研究

doi: 10.7513/j.issn.1004-7638.2023.02.014

李兆营

安徽光智科技有限公司, 安徽滁州 239000

详细信息

中图分类号: TF823,TN305.8
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- 被引次数: 0
出版历程
- 收稿日期: 2022-09-20
- 刊出日期: 2023-04-30

Study on properties of Ti films prepared by magnetron sputtering and electron beam evaporation

Li Zhaoying

Vital Optics Technology Co., Ltd., Chuzhou 239000, Anhui, China

摘要

摘要: 为了研究不同制备方法对薄膜性能的影响，分别利用磁控溅射法和电子束蒸发法在长有500 nm厚的SiO₂薄膜的Si(100)晶圆上制备了生长速度为1.0 nm/s，厚度为100 nm的Ti薄膜，并对薄膜的厚度、表面形貌、电阻、反射率及应力进行了测试。相比于电子束蒸发法，磁控溅射法制备的薄膜表面晶粒更加均匀致密，表面缺陷少，粗糙度较小，薄膜具有更低的电阻、应力以及更高的反射率。试验结果表明，磁控溅射法制备的薄膜电性能优于电子束蒸发法。电子束蒸发法制备的薄膜应力具有较大的变化范围，可用于多层膜之间的应力匹配调试。同时，也可以通过减少薄膜表面结构缺陷，减小薄膜表面粗糙度来提高薄膜的性能。
- Ti薄膜 /
- 磁控溅射 /
- 电子束蒸发 /
- 电阻 /
- 反射率 /
- 应力
Abstract: Aiming at studying the effects of different preparation methods on the properties, Ti films with a growth rate of 1.0 nm/s and a thickness of 100 nm were prepared on Si(100) wafers with 500 nm thick SiO₂ films by magnetron sputtering and electron beam evaporation methods respectively. The thickness, surface morphology, resistance, reflectance and stress of Ti films were measured. Compared with electron beam evaporation, Ti films prepared by magnetron sputtering have a more uniform and denser surface with fewer defects and smaller roughness, lower resistance, stress and higher reflectance. The results show that the electrical performance of Ti films prepared by magnetron sputtering are superior to that of electron beam evaporation. The stress of Ti films prepared by electron beam evaporation has a large range of variation, which can be used for the stress matching debugging between multilayer films. The performance of the films can be improved by reducing the surface structural defects and surface roughness.
- Ti films /
- magnetron sputtering /
- electron beam evaporation /
- resistance /
- reflectance /
- stress

HTML全文

图 1 25 ℃下磁控溅射法(a)和电子束蒸发法(b)制备的Ti薄膜表面的AFM形貌

Figure 1. AFM morphologies of Ti films prepared by magnetron sputtering(a) and electron beam evaporation(b) at 25 ℃

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图 2 不同温度下磁控溅射法和电子束蒸发法制备的Ti薄膜的残余应力

Figure 2. Residual stress of Ti films prepared by magnetron sputtering and electron beam evaporation at different temperatures

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表 1 25 ℃下磁控溅射法和电子束蒸发法制备的Ti薄膜性能比较

Table 1. Properties of Ti films prepared by magnetron sputtering and electron beam evaporation at 25 ℃

制备方法电阻/Ω 电阻均匀性U/% 反射率/%

磁控溅射法 7.2 0.92 55.4
电子束蒸发法 8.1 2.24 53.4

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