Synthesizing VO_2-xN_y Thin Films by Microwave Plasma Enhanced Processes

According to the character of VO₂ taking phase transition at near 68℃,using the mixture gas of high pure hydrogen and high pure nitrogen as precursor,VO_2-xN_y thin films are synthesized at low temperature by microwave plasma enhanced procesesses using V₂O₅ as molecular precursors through coating film on glass slice.The components of synthesized samples are characterized by X-ray diffraction(XRD),the X-ray diffraction pattern indicates that the synthesized samples are nitrogen doped VO_2-xN_y,the crystallinity of synthesized sample is low and the particle size is small.The measurement of phase transition temperature indicates that the phase transition temperature of VO_2-xN_y thin films is dropped due to doped nitrogen,the lowest phase transition temperature is 42℃.