Volume 31 Issue 2
Apr.  2010
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Li Minjiao, Zhang Shulin, Ding Xiumin, Luo Yi, Xiong Miao. Preparation of Tungsten-doped VO2 Thin Film with Low Phase Transition Temperature by Hydrogen Reduction Method[J]. IRON STEEL VANADIUM TITANIUM, 2010, 31(2): 6-9.
Citation: Li Minjiao, Zhang Shulin, Ding Xiumin, Luo Yi, Xiong Miao. Preparation of Tungsten-doped VO2 Thin Film with Low Phase Transition Temperature by Hydrogen Reduction Method[J]. IRON STEEL VANADIUM TITANIUM, 2010, 31(2): 6-9.

Preparation of Tungsten-doped VO2 Thin Film with Low Phase Transition Temperature by Hydrogen Reduction Method

  • Received Date: 2010-03-15
    Available Online: 2023-12-05
  • V2O5 film was first fabricated by dipping a glass slide into a V2O5 gel containing a small quantity of polytungstate sol.Then the V2O5 film was reduced in hydrogen atmosphere at 400℃ for 3 h and then a tungsten-doped VO2 thin film was prepared.The resulted film shows the characteristic green of VO2.the content of W and V is 3.212% and 64.97%, respectively.The results of the curve of resistance-temperature show that the phase transition temperature of the VO2 thin film is 40.5℃, the thermal hysteresis loop width is ΔT=11℃, amount of resistance mutation(ΔS) is 4.06 orders of magnitude.
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